V10PL45 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V10PL45
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
I_F = 5.0 A
I_F = 10 A
I_F = 5.0 A
I_F = 10 A
Reverse current
V_R = 45 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
0.39
0.44
0.28
0.35
-
30
MAX.
-
0.52
-
0.43
5.0
75
UNIT
V
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10PL45
Typical thermal resistance
R_JA ⁽¹⁾
68
R_JM ⁽²⁾
4
Notes
(1) _{Free air, mounted on recommended copper pad area; thermal resistance RJA - junction to ambient}
(2) _{Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance RJM - junction to mount}
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V10PL45-M3/86A
0.10
86A
V10PL45-M3/87A
0.10
87A
BASE QUANTITY
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
12
T_M = 130 °C
10
8
6
T_A = 25 °C
4
2
0
0 25 50 75 100 125 150 175
T_M - Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Notes
(1) _{Mounted on 30 mm x 30 mm aluminum PCB; TM measured}
at the terminal of cathode band (R_JM = 4 °C/W)
(2) _{Free air, mounted on recommended copper pad area}
(R_JA = 68 °C/W)
Revision: 23-Feb-12
2
Document Number: 89479
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