V10P20 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Trench MOS Schottky technology

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V10P20
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
I_F = 5.0 A
I_F = 10 A
I_F = 5.0 A
I_F = 10 A
Reverse current
V_R = 180 V
V_R = 200 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
0.78
0.98
0.59
0.67
3.6
3.5
8.6
5.8
MAX.
-
1.34
-
0.75
-
-
400
30
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10P20
Typical thermal resistance
R_JA ⁽¹⁾
80
R_JM ⁽²⁾
4
Notes
(1) _{Free air, mounted on recommended copper pad area; thermal resistance RJA - junction to ambient}
(2) _{Mounted on 30 mm x 30 mm Al PCB; thermal resistance RJM - junction to mount}
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V10P20-M3/86A
0.10
86A
V10P20-M3/87A
0.10
87A
BASE QUANTITY
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
12
Mounted on Al PCB, T_M = 121 °C
10
8
6
4
Mounted on Recommended
Copper Pad Area (R_θJA = 80 °C/W)
2
0
0
25
50
75 100 125 150
Ambient Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
9
8
D = 0.5 ^{D = 0.8}
D = 0.3
7
D = 0.2
6
D = 0.1
5
D = 1.0
4
3
T
2
1
D = t_p/T
t_p
0
0
2
4
6
8
10
12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 17-Feb-17
2
Document Number: 89316
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