V10P12-M386A Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V10P12
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
I_R = 1.0 mA
I_F = 5 A
I_F = 10 A
I_F = 5 A
I_F = 10 A
Reverse current
V_R = 90 V
V_R = 120 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
T_A = 25 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_BR
V_F ⁽¹⁾
I_R ⁽²⁾
120 (minimum)
0.57
0.74
0.51
0.62
6
4.5
16
8.5
MAX.
-
-
0.82
-
0.70
-
-
400
30
UNIT
V
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
R_JA ⁽¹⁾
R_JL
Note
(1) _{Units mounted on recommended PCB 1 oz. pad layout}
V10P12
60
4
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V10P12-M3/86A
0.10
86A
V10P12-M3/87A
0.10
87A
V10P12HM3/86A ⁽¹⁾
0.10
86A
V10P12HM3/87A ⁽¹⁾
0.10
87A
Note
(1) _{Automotive grade}
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 25-Jul-12
2
Document Number: 89171
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