V10D45C Datasheet, PDF (2/6 Pages) Vishay Siliconix – Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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V10D45C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
I_F = 2.5 A
I_F = 5.0 A
I_F = 2.5 A
I_F = 5.0 A
Reverse current per diode
V_R = 45 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  5 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
TYP.
0.44
0.50
0.34
0.41
-
3
MAX.
-
0.58
-
0.50
500
15
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10D45C
per diode
3.5
Typical thermal resistance
per device
R_JC
2.5
per device
R_JA ⁽¹⁾⁽²⁾
48
Notes
(1) _{The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA}
(2) _{Free air, without heatsink}
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT
WEIGHT (g)
TO-263AC (SMPD) V10D45C-M3/I
0.55
TO-263AC (SMPD) V10D45CHM3/I ⁽¹⁾
0.55
Note
(1) _{AEC-Q101 qualified}
PACKAGE CODE BASE QUANTITY
DELIVERY MODE
I
2000/reel
13" diameter plastic tape and reel
I
2000/reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
12
10
Rth_JA=Rth_JC=2.5^oC/W
8
T_A , Rth_JA=48^oC/W
6
4
2
0
0
25
50
75 100 125 150
Case Temperature (°C) (D=duty cycle=0.5)
Fig. 1 - Forward Current Derating Curve
2.8
D = 0.8
2.4
D = 0.5
D = 0.3
2
D = 0.2
D = 1.0
1.6
D = 0.1
1.2
T
0.8
0.4
0
0
D = t_p/T t_p
1
2
3
4
5
6
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 09-Dec-13
2
Document Number: 89992
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