V10D202C Datasheet, PDF (2/5 Pages) Vishay Siliconix – Trench MOS Schottky technology generation 2

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V10D202C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
I_F = 2.5 A
I_F = 5 A
I_F = 2.5 A
I_F = 5 A
Reverse current at rated V_R per diode
V_R = 160 V
V_R = 200 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  5 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
TYP.
0.75
0.82
0.6
0.67
0.4
0.5
-
1.3
MAX.
-
0.9
-
0.74
-
-
50
5
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10D202C
UNIT
Typical thermal resistance
per diode
per device
R_JC
3.5
2.5
°C/W
per device
R_JA ⁽¹⁾⁽²⁾
58
Notes
(1) _{The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA - junction-to -mount}
(2) _{Free air, without heatsink}
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT
(g)
TO-263AC (SMPD) V10D202C-M3/I
0.55
TO-263AC (SMPD) V10D202CHM3/I ⁽¹⁾
0.55
Note
(1) _{AEC-Q101 qualified}
PACKAGE CODE BASE QUANTITY
DELIVERY MODE
I
2000/reel
13" diameter plastic tape and reel
I
2000/reel
13" diameter plastic tape and reel

RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
12
Rth_JC =2.5 ƱC/W
10
8
6
Rth_JA =58 ƱC/W
4
2
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
4.5
D = 0.5 ^{D = 0.8}
4.0
3.5
D = 0.3
D = 1.0
3.0
D = 0.2
2.5
2.0
D = 0.1
1.5
T
1.0
0.5
D = t_p/T
t_p
0.0
0
1
2
3
4
5
6
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 10-Feb-15
2
Document Number: 87746
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