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V10150S Datasheet, PDF (2/5 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
New Product
V10150S, VF10150S, VB10150S & VI10150S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA TA = 25 °C
VBR
150 (minimum)
Instantaneous forward voltage (1)
IF = 5 A
IF = 10 A
TA = 25 °C
VF
IF = 5 A
IF = 10 A
TA = 125 °C
0.79
1.05
0.59
0.69
Reverse current (2)
VR = 100 V
TA = 25 °C
TA = 125 °C
1.3
1.2
VR = 150 V
TA = 25 °C
TA = 125 °C
IR
-
3
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
MAX.
-
-
1.20
-
0.75
-
-
150
15
UNIT
V
V
µA
mA
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10150S
VF10150S
Typical thermal resistance
RθJC
2.0
4.0
VB10150S
2.0
VI10150S
2.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V10150S-E3/4W
1.88
ITO-220AB
VF10150S-E3/4W
1.75
TO-263AB
VB10150S-E3/4W
1.37
TO-263AB
VB10150S-E3/8W
1.37
TO-262AA
VI10150S-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
V(B,I)10150S
8
VF10150S
6
4
2
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
10
D = 0.8
D = 0.5
8
D = 0.3
D = 0.2
6
D = 0.1
4
D = 1.0
T
2
D = tp/T
tp
0
0
2
4
6
8
10
12
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
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2
For technical questions within your region, please contact one of the following: Document Number: 89058
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 19-May-08