V10150C_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual High Voltage Trench MOS Barrier Schottky Rectifier

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V10150C, VI10150C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
I_F = 3 A
I_F = 5 A
I_F = 3 A
I_F = 5 A
Reverse current per diode
V_R = 100 V
V_R = 150 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
0.82
0.99
0.63
0.69
0.5
0.5
-
1.0
MAX.
-
1.41
-
0.75
-
-
100
10
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
R_JC
V10150C
VI10150C
4.0
UNIT
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V10150C-M3/4W
1.87
TO-262AA
TO-220AB
TO-262AA
VI10150C-M3/4W
V10150CHM3/4W ⁽¹⁾
VI10150CHM3/4W ⁽¹⁾
1.45
1.87
1.45
Note
(1) _{AEC-Q101 qualified}


RATINGS AND CHARACTERISTICS CURVES 
(T_A = 25 °C unless otherwise noted)
PACKAGE CODE
4W
4W
4W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
12
Resistive or Inductive Load
10
8
6
4
2
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
5
D = 0.8
D = 0.5
4
D = 0.3
D = 0.2
3
D = 0.1
2
D = 1.0
T
1
D = t_p/T
t_p
0
0
1
2
3
4
5
6
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 16-Aug-13
2
Document Number: 89154
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