UHF20FCT Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual Common-Cathode Ultrafast Recovery Rectifier

UHF20FCT
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Maximum reverse recovery time
I_F = 0.5 A, I_R = 1.0 A,
I_rr = 0.25 A
t_rr
20
Maximum reverse recovery time per diode
I_F = 1.0 A, dI/dt = 50 A/µs,
V_R = 30 V, I_rr = 0.1 I_RM
t_rr
28
Typical softness factor (tb/ta)
Typical reverse recovery current
Typical stored charge
I_F = 10 A, dI/dt = 200 A/µs,
S
V_R = 200 V, T_J = 125 °C
I_RM
per diode
Q_rr
0.36
7.0
160
Typical forward recovery time per diode
I_F = 10 A, dI/dt = 80 A/µs,
V_FR = 1.1 x V_Fmax
t_fr
150
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
MAX.
25
35
-
-
-
-
UNIT
ns
ns
-
A
nC
ns
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
R_θJA ⁽¹⁾
R_θJC(2)
Notes:
(1) Without heatsink, free air
(2) With infinite heatsink
UHF20FCT
50
4.6
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
ITO-220AB
UHF20FCT-E3/4W
1.74
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
12
11
10
9
8
7
6
5
4
3
2
1
0
0
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 0.8
D = 1.0
T
D = t_p/T
t_p
2
4
6
8
10
12
Average Forward Current (A)
Figure 1. Forward Power Loss Characteristics Per Diode
100
T_J = 125 °C
10
T_J = 175 °C
1
T_J = 25 °C
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Instantaneous Forward Voltage (V)
Figure 2. Typical Instantaneous Forward Characteristics Per Diode
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For technical questions within your region, please contact one of the following: Document Number: 89064
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Revision: 13-May-08