UH8JT Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Voltage Ultrafast Rectifier

UH8JT & UHF8JT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
at I_F = 0.5 A, I_R = 1.0 A,
I_rr = 0.25 A
20
Maximum reverse recovery time
t_rr
at I_F = 1.0 A, di/dt = 50 A/µs,
V_R = 30 V, I_rr = 0.1 I_RM
-
Typical softness factor (t_b/t_a)
S
0.5
Typical reverse recovery current
I_F = 8 A, di/dt = 200 A/µs,
V_R = 400 V, T_J = 125 °C
I_RM
5.5
Typical stored charge
Q_rr
150
Typical forward
recovery time
at I_F = 8 A, di/dt = 64 A/µs,
V_F = 1.1 x V_{F max}
t_fr
150
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UH8JT
Typical thermal resistance from junction to case
R_θJC
2.0
MAX.
25
45
-
7.0
-
-
UNIT
ns
-
A
nC
ns
UHF8JT
4.0
UNIT
°C/W
ORDERING INFORMATION
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AC
UH8JT-E3/45
1.83
ITO-220AC UHF8JT-E3/45
2.05
PACKAGE CODE
45
45
BASE QUANTITY
50/Tube
50/Tube
DELIVERY MODE
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
12.0
Resistive or
10.0
Inductive Load
8.0
UH8JT
6.0
UHF8JT
4.0
2.0
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
16
D = 0.8
14
D = 0.5
D = 0.3
12
D = 0.2
10
D = 0.1
D = 1.0
8
6
T
4
2
D - tp/T tp
0
0 1 23 45 6 7 8 9
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
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2
Document Number 88956
21-Apr-06