UH5JT Datasheet, PDF (2/4 Pages) Vishay Siliconix – High Voltage Ultrafast Rectifier

UH5JT & UH5JT
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Reverse current ⁽²⁾
V_R = 600 V
T_A = 25 °C
T_A = 125 °C
I_R
I_F = 0.5 A, I_R = 1.0 A,
I_rr = 0.25 A
Maximum reverse recovery time
t_rr
I_F = 1.0 A, dI/dt = 50 A/µs,
V_R = 30 V, I_rr = 0.1 I_RM
Typical softness factor (t_b/t_a)
S
Typical reverse recovery current
I_F = 5 A, dI/dt = 200 A/µs,
V_R = 400 V, T_J = 125 °C
I_RM
Typical stored charge
Q_rr
Typical forward recovery time
I_F = 5 A, dI/dt = 40 A/µs,
V_F = 1.1 x V_{F max.}
t_fr
-
-
-
-
0.55
5.8
140
160
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UH5JT
Typical thermal resistance from junction to case
R_θJC
3.0
MAX.
5.0
100
25
40
-
7.0
-
-
UNIT
µA
ns
-
A
nC
ns
UHF5JT
6.6
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AC
UH5JT-E3/4W
1.83
ITO-220AC UHF5JT-E3/4W
1.70
PACKAGE CODE
4W
4W
BASE QUANTITY
50/tube
50/tube
DELIVERY MODE
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
6
Resistive or Inductive Load
5
UH5JT
4
UHF5JT
3
2
1
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
9
D = 0.3 ^{D = 0.5 D = 0.8}
8
7
D = 0.2
6
D = 0.1
5
D = 1.0
4
3
T
2
1
D = t_p/T
t_p
0
0
1
2
3
4
5
6
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
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2
For technical questions within your region, please contact one of the following: Document Number: 88999
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Revision: 13-May-08