UH3B-M3 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Oxide planar chip junction

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UH3B-M3, UH3C-M3, UH3D-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage
Reverse current
Maximum reverse recovery time
Typical reverse recovery time
Typical softness factor (t_b/t_a)
Typical reverse recovery current
Typical stored charge
Typical junction capacitance
I_F = 1.5 A
I_F = 3.0 A
I_F = 1.5 A
I_F = 3.0 A
Rated V_R
I_F = 0.5 A, I_R = 1.0 A,
l_rr = 0.25 A
I_F = 1.0 A, dI/dt = 50 A/μs,
V_R = 30 V, l_rr = 0.1 I_RM
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
I_F = 3.0 A, dI/dt = 200 A/μs,
V_R = 200 V
T_A = 125 °C
4.0 V, 1 MHz
V_F ⁽¹⁾
I_R ⁽²⁾
t_rr
S
I_RM
Q_rr
C_J
Notes
(1) _{Pulse test: 300 µs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
TYP.
0.85
0.95
0.65
0.75
-
15
14
23
0.2
5.0
60
42
MAX.
-
1.05
-
0.90
5
100
25
40
-
7.0
-
-
UNIT
V
μA
ns
A
nC
pF
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UH3B
UH3C
UH3D
Typical thermal resistance
R_JA ⁽¹⁾
95
R_JM ⁽¹⁾
12
Note
(1) _{Free air, mounted on recommended copper pad area. Thermal resistance RJA - junction to ambient, RJM - junction to mount}
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
UH3D-M3/57T
0.236
57T
UH3D-M3/9AT
0.236
9AT
BASE QUANTITY
850
3500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel

RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
3.5
Resistive or Inductive Load
3.0
2.5
2.0
1.5
1.0
0.5
T_M Measured
at Mount of Terminal
0
0
25 50 75 100 125 150 175
T_M - Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
3.0
D = 0.3 ^{D = 0.5 D = 0.8}
2.5
D = 0.2
2.0
D = 0.1
1.5
D = 1.0
1.0
T
0.5
0
0
D = t_p/T
t_p
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 23-Oct-13
2
Document Number: 89924
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