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UH20FCT_08 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual Common-Cathode Ultrafast Recovery Rectifier
UH20FCT& UHB20FCT
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum reverse current per diode (2)
Maximum reverse recovery time
Maximum reverse recovery time per diode
Typical softness factor (tb/ta)
Typical reverse recovery current
Typical stored charge
Typical forward recovery time per diode
VR = 300 V
TJ = 25 °C
TJ = 125 °C
IR
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
IF = 1.0 A, dI/dt = 50 A/µs,
VR = 30 V, Irr = 0.1 IRM
trr
IF = 10 A, dI/dt = 200 A/µs,
S
VR = 200 V, TJ = 125 °C
IRM
per diode
Qrr
IF = 10 A, dI/dt = 80 A/µs,
VFR = 1.1 x VF max.
tfr
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
TYP.
0.5
25
20
28
0.36
7.0
160
150
MAX.
5
150
25
35
-
-
-
-
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UH20FCT
Typical thermal resistance per diode
RθJC
2.0
UHB20FCT
2.0
UNIT
µA
ns
ns
-
A
nC
ns
UNIT
°C/W
ORDERING INFORMATION
PACKAGE
PREFERRED P/N
TO-220AB
UH20FCT-E3/4W
TO-263AB
UHB20FCT-E3/4W
TO-263AB
UHB20FCT-E3/8W
UNIT WEIGHT (g)
1.88
1.38
1.38
PACKAGE CODE
4W
4W
8W
BASE QUANTITY
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
24
20
16
12
8
4
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
12
11
10
9
8
7
6
5
4
3
2
1
0
0
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 0.8
D = 1.0
T
D = tp/T
tp
2
4
6
8
10
12
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
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2
For technical questions within your region, please contact one of the following: Document Number: 88964
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 13-May-08