UH20FCT Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual Common-Cathode Ultrafast Recovery Rectifier

UH20FCT& UHB20FCT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum reverse recovery time
at I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
t_rr
Maximum reverse recovery time per diode
at I_F = 1.0 A, di/dt = 50 A/µs,
V_R = 30 V, I_rr = 0.1 I_RM
t_rr
Typical softness factor (tb/ta)
at I_F = 10 A, di/dt = 200 A/µs,
S
Typical reverse recovery current
V_R = 200 V, T_J = 125 °C
I_RM
Typical stored charge
per diode
Q_rr
Typical forward recovery time per diode
at I_F = 10 A, di/dt = 80 A/µs,
V_FR = 1.1 x V_Fmax
t_fr
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
TYP.
20
28
0.36
7.0
160
150
MAX.
25
35
-
-
-
-
UNIT
ns
ns
-
A
nC
ns
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UH20FCT
Typical thermal resistance per diode
R_θJC
2.0
UHB20FCT
2.0
UNIT
°C/W
ORDERING INFORMATION
PACKAGE
PREFERRED P/N
TO-220AB
UH20FCT-E3/4W
TO-263AB
UHB20FCT-E3/4W
TO-263AB
UHB20FCT-E3/8W
UNIT WEIGHT (g)
1.88
1.38
1.38
PACKAGE CODE
4W
4W
8W
BASE QUANTITY
50/Tube
50/Tube
800/Reel
DELIVERY MODE
Tube
Tube
Tape & Reel
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
24
20
16
12
8
4
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
12
11
10
9
8
7
6
5
4
3
2
1
0
0
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 0.8
D = 1.0
T
D - tp/T tp
2
4
6
8
10
12
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
www.vishay.com
2
Document Number 88964
10-Nov-06