UGE18ACT Datasheet, PDF (2/5 Pages) Vishay Siliconix – Glass passivated pellet chip junction

UGE18ACT, UGE18BCT, UGE18CCT, UGE18DCT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL UGE18ACT UGE18BCT UGE18CCT UGE18DCT UNIT
Max. instantaneous
forward voltage
per diode ⁽¹⁾
Max. DC reverse current at
rated DC blocking voltage 
per diode
9.0 A
20 A
5.0 A
V_F
T_J = 100 °C
T_A = 25 °C
I_R
T_A = 100 °C
1.1
1.2
V
0.95
10
μA
300
Max. reverse recovery time 
per diode
I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
t_rr
20
ns
Max. reverse recovery time 
per diode
I_F = 9.0 A, V_R = 30 V, 
dI/dt = 50 A/μs,
I_rr = 10 % I_RM
T_J = 25 °C
T_J = 100 °C
t_rr
Max. stored charge per
diode
I_F = 9.0 A, V_R = 30 V,  T_J = 25 °C
dI/dt = 50 A/μs,
I_rr = 10 % I_RM
T_J = 100 °C
Q_rr
Typical junction
capacitance per diode
at 4.0 V, 1 MHz
C_J
30
ns
50
20
nC
45
30
pF
Note
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
THERMAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL UGE18ACT UGE18BCT UGE18CCT UGE18DCT UNIT
Typical thermal resistance from junction to case per diode
R_JC
4.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
UGE18DCT-E3/45
1.85
PACKAGE CODE
45
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
Revision: 23-Feb-16
2
Document Number: 87920
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000