UGB8XT Datasheet, PDF (2/5 Pages) Vishay Siliconix – Ultrafast Rectifier

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UG8xT, UGF8xT, UGB8xT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL UG8AT
Max. instantaneous
forward voltage
8.0 A
20.0 A
5.0 A
T_J = 150 °C
V_F ⁽¹⁾
Max. DC reverse current at rated
DC blocking voltage
T_J = 25 °C
T_J = 100 °C
I_R
Max. reverse recovery time
I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
t_rr
Max. reverse recovery time
I_F = 8.0 A, V_R = 30 V, T_J = 25 °C
dI/dt = 50 A/μs, 
I_rr = 10 % I_RM
T_J = 100 °C
t_rr
Max. recovered stored charged
I_F = 8.0 A, V_R = 30 V,
dI/dt = 50 A/μs
T_J = 25 °C
T_J = 100 °C
Q_rr
Typical junction capacitance
4.0 V, 1 MHz
C_J
Note
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
UG8BT UG8CT
1.0
1.2
0.95
10
300
20
30
50
20
45
45
UG8DT UNIT
V
μA
ns
ns
nC
pF
THERMAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL UG8xT
Typical thermal resistance from junction to case
R_JC ⁽¹⁾
4.0
UGF8xT
5.0
UGB8xT
4.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AC
UG8DT-E3/45
1.80
ITO-220AC
UGF8DT-E3/45
1.95
TO-263AB
UGB8DT-E3/45
1.33
TO-263AB
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
UGB8DT-E3/81
UG8DTHE3/45 ⁽¹⁾
UGF8DTHE3/45 ⁽¹⁾
UGB8DTHE3/45 ⁽¹⁾
UGB8DTHE3/81 ⁽¹⁾
1.33
1.80
1.95
1.33
1.33
Note
(1) _{AEC-Q101 qualified}
PACKAGE CODE
45
45
45
81
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tube
Tape and reel
Revision: 24-Feb-16
2
Document Number: 88765
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