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UG1A Datasheet, PDF (2/4 Pages) General Semiconductor – ULTRAFAST EFFICIENT PLASTIC RECTIFIER
UG1A thru UG1D
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous forward voltage (1) IF = 1.0 A
VF
Maximum DC reverse current at rated DC
blocking voltage
TA = 25 °C
TA = 100 °C
IR
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
Maximum reverse recovery time
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/µs, Irr = 10 % IRM
TJ = 25 °C
TJ = 100 °C
trr
Maximum stored charge
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/µs, Irr = 10 % IRM
TJ = 25 °C
TJ = 100 °C
Qrr
Typical junction capacitance
4.0 V, 1 MHz
CJ
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
VALUE
0.95
5.0
200
15
25
35
8.0
12
7
UNIT
V
µA
ns
ns
nC
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UG1A
UG1B
Typical thermal resistance (1)
RθJA
RθJL
60
20
Note:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length
UG1C
UG1D
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
UG1D-E3/54
0.334
54
UG1D-E3/73
0.334
73
BASE QUANTITY
5500
3000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.50
1.25
1.00
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
TL Lead Temperature
0.75
0.50
TA, Ambient Temperature
0.25
P.C.B. Mounted on
0.5 x 0.5" (12.0 x 12.0 mm)
Copper Pad Areas
0
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 1. Forward Current Derating Curves
100
TL = 75 °C
8.3 ms Single Half Sine-Wave
10
1
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following: Document Number: 88760
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 20-Aug-07