UG18ACT Datasheet, PDF (2/5 Pages) General Semiconductor – ULTRAFAST EFFICIENT PLASTIC RECTIFIER

UG(F,B)18ACT thru UG(F,B)18DCT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL UG18ACT UG18BCT UG18CCT UG18DCT UNIT
Maximum instantaneous
forward voltage per diode ⁽¹⁾
9.0 A
20 A
5.0 A
V_F
T_J = 100 °C
1.1
1.2
V
0.95
Maximum DC reverse
current at rated DC blocking
voltage per diode
T_A = 25 °C
T_A = 100 °C
I_R
10
300
µA
Maximum reverse recovery
time per diode
I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
t_rr
20
ns
Maximum reverse recovery
time per diode
I_F = 9.0 A, V_R = 30 V,
dI/dt = 50 A/µs,
I_rr = 10 % I_RM
T_J = 25 °C
T_J = 100 °C
t_rr
Maximum stored
charge per diode
I_F = 9.0 A, V_R = 30 V,
dI/dt = 50 A/µs,
I_rr = 10 % I_RM
T_J = 25 °C
T_J = 100 °C
Q_rr
Typical junction capacitance
per diode
at 4.0 V, 1 MHz
C_J
30
50
ns
20
45
nC
30
pF
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UG18
Typical thermal resistance from junction to case per diode
R_θJC
4.0
UGF18
6.0
UGB18
4.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
UG18DCT-E3/45
1.85
ITO-220AB
UGF18DCT-E3/45
2.00
TO-263AB
UGB18DCT-E3/45
1.35
TO-263AB
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
UGB18DCT-E3/81
UG18DCTHE3/45 ⁽¹⁾
UGF18DCTHE3/45 ⁽¹⁾
UGB18DCTHE3/45 ⁽¹⁾
UGB18DCTHE3/81 ⁽¹⁾
1.35
1.85
2.00
1.35
1.35
Note:
(1) Automotive grade AEC Q101 qualified
PACKAGE CODE
45
45
45
81
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
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Tape and reel
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Tape and reel
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2
For technical questions within your region, please contact one of the following: Document Number: 88759
[e-mail], [e-mail], [e-mail]
Revision: 09-Nov-07