UFB60FA20P Datasheet, PDF (2/8 Pages) Vishay Siliconix – Insulated Ultrafast Rectifier Module, 60 A

UFB60FA20P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 60 A
ELECTRICAL SPECIFICATIONS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage V_BR
Forward voltage
V_FM
Reverse leakage current
I_RM
Junction capacitance
C_T
I_R = 100 μA
I_F = 30 A
I_F = 30 A, T_J = 150 °C
V_R = V_R rated
T_J = 150 °C, V_R = V_R rated
V_R = 200 V
200
-
-
0.96
-
0.78
-
-
-
-
-
119
MAX.
-
1.08
0.86
100
1.0
-
UNITS
V
μA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
-
-
27
Reverse recovery time
t_rr
T_J = 25 °C
-
31
-
Peak recovery current
Reverse recovery charge
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
51
-
I_F = 30 A
-
2.7
-
dI_F/dt = 200 A/μs
V_R = 100 V
-
6.8
-
-
41
-
-
174
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case,
single leg conducting
Junction to case,
both leg conducting
Case to heatsink
Weight
R_thJC
R_thCS
Flat, greased surface
Mounting torque
MIN.
-
TYP.
-
MAX. UNITS
1.9 °C/W
-
-
0.95
K/W
-
0.05
-
-
30
-
g
-
1.3
-
Nm
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For technical questions within your region, please contact one of the following: Document Number: 94520
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Revision: 21-Jul-10