UFB200FA40P_10 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Insulated Ultrafast Rectifier Module, 200 A

UFB200FA40P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 200 A
ELECTRICAL SPECIFICATIONS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage
Forward voltage
Reverse leakage current
Junction capacitance
V_BR
I_R = 100 μA
I_F = 100 A
V_FM
I_F = 100 A, T_J = 150 °C
V_R = V_R rated
I_RM
T_J = 150 °C, V_R = V_R rated
C_T
V_R = 400 V
400
-
-
1.04
-
0.94
-
-
-
-
-
100
MAX.
-
1.24
1.00
50
4
-
UNITS
V
μA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
Reverse recovery time
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
t_rr
T_J = 25 °C
-
-
60
-
93
-
Peak recovery current
Reverse recovery charge
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 150 A
dI_F/dt = 200 A/μs
V_R = 200 V
-
172
-
-
10.5
-
-
20.2
-
-
490
-
-
1740
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case, single leg conducting
Junction to case, both leg conducting
R_thJC
Case to heatsink
Weight
R_thCS
Flat, greased surface
Mounting torque
MIN.
-
-
-
-
-
TYP.
-
-
0.05
30
1.3
MAX.
0.5
0.25
-
-
-
UNITS
°C/W
g
Nm
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94088
[e-mail], [e-mail], [e-mail]
Revision: 21-Jul-10