UFB200FA40P Datasheet, PDF (2/7 Pages) Vishay Siliconix – Insulated Ultrafast Rectifier Module, 230 A

UFB200FA40P
Vishay High Power Products ^{Insulated Ultrafast}
Rectifier Module, 230 A
ELECTRICAL SPECIFICATIONS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage
V_BR
Forward voltage
V_FM
Reverse leakage current
I_RM
Junction capacitance
C_T
I_R = 100 µA
I_F = 100 A
I_F = 100 A, T_J = 150 °C
V_R = V_R rated
T_J = 150 °C, V_R = V_R rated
V_R = 400 V
400
-
-
1.04
-
0.94
-
-
-
-
-
100
MAX.
-
1.24
1.00
50
4
-
UNITS
V
µA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNITS
I_F = 1.0 A, dI_F/dt = 200 A/µs, V_R = 30 V
-
-
60
Reverse recovery time
Peak recovery current
Reverse recovery charge
t_rr
I_RRM
Q_rr
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
93
-
ns
-
172
-
I_F = 150 A
-
10.5
-
dI_F/dt = 200 A/µs
A
V_R = 200 V
-
20.2
-
-
490
-
nC
-
1740
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case, single leg conducting
Junction to case, both leg conducting
R_thJC
Case to heatsink
Weight
R_thCS
Flat, greased surface
Mounting torque
MIN.
-
-
-
-
-
TYP.
-
-
0.05
30
1.3
MAX.
0.5
0.25
-
-
-
UNITS
°C/W
g
Nm
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Document Number: 94088
Revision: 25-Apr-08