UFB200FA20P_10 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Insulated Ultrafast Rectifier Module, 240 A

UFB200FA20P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 240 A
ELECTRICAL SPECIFICATIONS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage V_BR
Forward voltage
V_FM
Reverse leakage current
I_RM
Junction capacitance
C_T
I_R = 100 μA
I_F = 120 A
I_F = 120 A, T_J = 150 °C
V_R = V_R rated
T_J = 150 °C, V_R = V_R rated
V_R = 200 V
200
-
-
-
-
-
-
-
-
-
-
200
MAX.
-
1.1
0.95
50
2
-
UNITS
V
μA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
Reverse recovery time
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
t_rr
T_J = 25 °C
-
-
45
-
34
-
Peak recovery current
Reverse recovery charge
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
58
-
I_F = 150 A
-
5.1
-
dI_F/dt = 200 A/μs
V_R = 160 V
-
10.3
-
-
87
-
-
300
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, single leg conducting
Junction to case, both leg conducting
R_thJC
Case to heatsink
Weight
R_thCS
Mounting torque
TEST CONDITIONS
Flat, greased surface
MIN.
-
-
-
-
-
TYP.
-
-
0.05
30
1.3
MAX.
0.5
0.25
-
-
-
UNITS
°C/W
g
Nm
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For technical questions within your region, please contact one of the following: Document Number: 94087
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Revision: 21-Jul-10