UFB130FA20 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Insulated Ultrafast Rectifier Module, 130 A

VS-UFB130FA20
Vishay Semiconductors ^{Insulated Ultrafast Rectifier Module, 130 A}
ELECTRICAL SPECIFICATIONS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage V_BR
Forward voltage
V_FM
Reverse leakage current
I_RM
Junction capacitance
C_T
I_R = 100 μA
I_F = 60 A
I_F = 60 A, T_J = 175 °C
V_R = V_R rated
T_J = 175 °C, V_R = V_R rated
V_R = 200 V
200
-
-
0.96
-
0.75
-
2
-
-
-
105
MAX.
-
1.13
0.89
50
1
-
UNITS
V
μA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
-
t_rr
T_J = 25 °C
-
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
I_F = 50 A
-
dI_F/dt = 200 A/μs
V_R = 100 V
-
-
-
TYP.
32
42
68
4.0
9.0
82
295
MAX.
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, single leg conducting
Junction to case, both leg conducting
R_thJC
Case to heatsink
Weight
R_thCS
Mounting torque
Case style
TEST CONDITIONS
Flat, greased surface
MIN.
-
-
-
-
-
TYP. MAX.
-
0.86
-
0.43
0.10
-
30
-
1.3
-
SOT-227
UNITS
°C/W
g
Nm
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Document Number: 93606
Revision: 12-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000