UFB120FA40P Datasheet, PDF (2/7 Pages) Vishay Siliconix – Insulated Ultrafast Rectifier Module, 120 A

UFB120FA40P
Vishay High Power Products ^{Insulated Ultrafast}
Rectifier Module, 120 A
ELECTRICAL SPECIFICATIONS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage
V_BR
Forward voltage
V_FM
Reverse leakage current
I_RM
Junction capacitance
C_T
I_R = 100 µA
I_F = 60 A
I_F = 60 A, T_J = 150 °C
V_R = V_R rated
T_J = 150 °C, V_R = V_R rated
V_R = 400 V
400
-
-
1.16
-
0.96
-
-
-
-
-
67
MAX.
-
1.37
1.13
0.1
1
-
UNITS
V
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNITS
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1.0 A, dI_F/dt = 200 A/µs, V_R = 30 V
-
30
35
t_rr
T_J = 25 °C
-
65
-
ns
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
128
-
I_F = 50 A
-
7.4
-
dI_F/dt = 200 A/µs
A
V_R = 200 V
-
17.8
-
-
240
-
nC
-
1139
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case, single diode conducting
Junction to case, both diodes conducting
R_thJC
Case to heatsink
R_thCS
Flat, greased surface
Weight
Mounting torque
MIN.
-
-
-
-
-
TYP.
0.99
0.49
0.05
30
1.3
MAX.
1.24
0.62
-
-
-
UNITS
°C/W
g
Nm
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Document Number: 94086
Revision: 25-Apr-08