UFB120FA20P Datasheet, PDF (2/7 Pages) Vishay Siliconix – Insulated Ultrafast Rectifier Module, 120 A

UFB120FA20P
Vishay High Power Products ^{Insulated Ultrafast}
Rectifier Module, 120 A
ELECTRICAL SPECIFICATIONS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage
V_BR
I_R = 100 µA
200
-
Forward voltage
I_F = 60 A
V_FM
I_F = 60 A, T_J = 150 °C
-
0.96
-
0.79
Reverse leakage current
Junction capacitance
V_R = V_R rated
I_RM
T_J = 150 °C, V_R = V_R rated
C_T
V_R = 200 V
-
-
-
-
-
105
MAX.
-
1.13
0.90
100
1.0
-
UNITS
V
µA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNITS
I_F = 1.0 A, dI_F/dt = 200 A/µs, V_R = 30 V
-
-
28
Reverse recovery time
t_rr
T_J = 25 °C
-
32
-
ns
Peak recovery current
Reverse recovery charge
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
64
-
I_F = 50 A
-
4.0
-
dI_F/dt = 200 A/µs
A
V_R = 100 V
-
8.2
-
-
64
-
nC
-
263
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case,
single diode conducting
Junction to case,
both diodes conducting
Case to heatsink
Weight
R_thJC
R_thCS
Flat, greased surface
Mounting torque
MIN.
-
-
-
-
-
TYP.
0.8
0.4
0.05
30
1.3
MAX. UNITS
1.1
0.55
K/W
-
-
g
-
Nm
www.vishay.com
2
For technical questions, contact: [e-mail]
Document Number: 94522
Revision: 07-May-08