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U1B-M3 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Surface Mount Ultrafast Plastic Rectifier
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U1B-M3, U1C-M3, U1D-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage
Reverse current
Reverse recovery time
Storage charge
Typical junction capacitance
IF = 0.6 A
IF = 1.0 A
IF = 0.6 A
IF = 1.0 A
Rated VR
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
IF = 0.6 A, dI/dt = 50 A/μs,
VR = 30 V, Irr = 0.1 IRM
IF = 0.6 A, dI/dt = 50 A/μs,
VR = 30 V, Irr = 0.1 IRM
4.0 V, 1 MHz
TA = 25 °C
TA = 100 °C
TA = 25 °C
TA = 100 °C
TA = 25 °C
TA = 25 °C
TA = 100 °C
TA = 25 °C
TA = 100 °C
VF (1)
IR (2)
trr
Qrr
CJ
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
TYP.
0.82
0.87
0.71
0.76
-
55
-
24
29
7
13
6.8
MAX.
0.87
0.92
0.78
0.84
5.0
100
15
-
-
-
-
-
UNIT
V
μA
ns
nC
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
U1B
U1C
U1D
UNIT
Typical thermal resistance
RJA (1)
RJM (1)
115
°C/W
22
Note
(1) Free air, mounted on recommended copper pad area
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
U1D-M3/61T
0.064
61T
U1D-M3/5AT
0.064
5AT
BASE QUANTITY
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.2
1.0
0.8
0.6
0.4
0.2
0
80 90 100 110 120 130 140 150
TM - Mount Temperature (°C)
Fig. 1 - Forward Derating Curve
1.0
D = 0.5
D = 0.8
0.8
D = 0.3
D = 0.2
0.6
D = 0.1
D = 1.0
0.4
0.2
0
0
T
D = tp/T tp
0.2
0.4
0.6
0.8
1.0
1.2
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 30-Aug-13
2
Document Number: 89400
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