TSHG5210_11 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode

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TSHG5210
Vishay Semiconductors
200
180
160
140
120
R_thJA = 230 K/W
100
80
60
40
20
0
0
21142
10 20 30 40 50 60 70 80 90 100
T_amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
R_thJA = 230 K/W
60
40
20
0
0
21143
10 20 30 40 50 60 70 80 90 100
T_amb - Ambient Temperature (°C)
Fig. 1 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
Temperature coefficient of V_F
I_F = 100 mA, t_p = 20 ms
I_F = 1 A, t_p = 100 μs
I_F = 1 mA
V_F
V_F
TK_VF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of _e
Angle of half intensity
V_R = 5 V
V_R = 0 V, f = 1 MHz, E = 0
I_F = 100 mA, t_p = 20 ms
I_F = 1 A, t_p = 100 μs
I_F = 100 mA, t_p = 20 ms
I_F = 100 mA
I_R
C_j
I_e
140
I_e
_e
TK_e

Peak wavelength
Spectral bandwidth
Temperature coefficient of _p
Rise time
Fall time
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
_p
820

TK_p
t_r
t_f
Cut-off frequency
Virtual source diameter
I_DC = 70 mA, I_AC = 30 mA pp
f_c
d
TYP.
1.5
2.3
- 1.8
125
230
2300
55
- 0.35
± 10
850
40
0.25
20
13
18
3.7
MAX.
1.8
10
420
880
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
Rev. 1.3, 23-Aug-11
2
Document Number: 81810
For technical questions, contact: [e-mail]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000