TSHF5410_08 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero

TSHF5410
Vishay Semiconductors ^{High Speed Infrared Emitting Diode, RoHS}
Compliant, 890 nm, GaAlAs Double Hetero
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 5 s, 2 mm from case
Thermal resistance junction/ambient
J-STD-051, leads 7 mm,
soldered on PCB
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
T_j
T_amb
T_stg
T_sd
R_thJA
VALUE
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
°C
°C
°C
°C
K/W
180
160
140
120
100
80 R_thJA = 230 K/W
60
40
20
0
0
21211
10 20 30 40 50 60 70 80 90 100
T_amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
R_thJA = 230 K/W
60
40
20
0
0
21212
10 20 30 40 50 60 70 80 90 100
T_amb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
Temperature coefficient of V_F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φ_e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λ_p
Rise time
Fall time
Cut-off frequency
Virtual source diameter
I_F = 100 mA, t_p = 20 ms
I_F = 1 A, t_p = 100 µs
I_F = 1 mA
V_R = 5 V
V_R = 0 V, f = 1 MHz, E = 0
I_F = 100 mA, t_p = 20 ms
I_F = 1 A, t_p = 100 µs
I_F = 100 mA, t_p = 20 ms
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
I_DC = 70 mA, I_AC = 30 mA pp
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_F
V_F
TK_VF
I_R
C_j
I_e
I_e
φ_e
TKφ_e
ϕ
λ_p
Δλ
TKλ_p
t_r
t_f
f_c
d
MIN.
45
TYP.
1.4
2.3
- 1.8
125
70
700
50
- 0.35
± 22
890
40
0.25
30
30
12
2.1
MAX.
1.6
10
135
UNIT
V
V
mV/K
µA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
www.vishay.com
180
For technical questions, contact: [e-mail]
Document Number: 81303
Rev. 1.2, 04-Sep-08