TSHF5210_09 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

TSHF5210
Vishay Semiconductors ^{High Speed Infrared Emitting Diode,}
890 nm, GaAlAs Double Hetero
180
160
140
120
100
80 R_thJA = 230 K/W
60
40
20
0
0
21211
10 20 30 40 50 60 70 80 90 100
T_amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
R_thJA = 230 K/W
60
40
20
0
0
21212
10 20 30 40 50 60 70 80 90 100
T_amb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
Temperature coefficient of V_F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φ_e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λ_p
Rise time
Fall time
Cut-off frequency
Virtual source diameter
I_F = 100 mA, t_p = 20 ms
I_F = 1 A, t_p = 100 µs
I_F = 1 mA
V_R = 5 V
V_R = 0 V, f = 1 MHz, E = 0
I_F = 100 mA, t_p = 20 ms
I_F = 1 A, t_p = 100 µs
I_F = 100 mA, t_p = 20 ms
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
I_DC = 70 mA, I_AC = 30 mA pp
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_F
V_F
TK_VF
I_R
C_j
I_e
I_e
φ_e
TKφ_e
ϕ
λ_p
Δλ
TKλ_p
t_r
t_f
f_c
d
MIN.
120
TYP.
1.4
2.3
- 1.8
125
180
1800
50
- 0.35
± 10
890
40
0.25
30
30
12
3.7
MAX.
1.6
10
360
UNIT
V
V
mV/K
µA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
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2
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Document Number: 81313
Rev. 1.3, 25-Jun-09