TSDF2020W Datasheet, PDF (2/4 Pages) Vishay Siliconix – 25 GHz Silicon NPN Planar RF Transistor

TSDF2020W
Vishay Semiconductors
Electrical DC Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
DC forward current transfer ratio
V_CE = 5 V, V_BE = 0
V_CB = 5 V, I_E = 0
V_EB = 1 V, I_C = 0
I_C = 1 mA, I_B = 0
I_C = 30 mA, I_B = 3 mA
V_CE = 2 V, I_C = 20 mA
Symbol
I_CES
I_CBO
I_EBO
V_(BR)CEO
V_CEsat
h_FE
Min. Typ. Max. Unit
100 µA
100 nA
1 µA
3.5
V
0.1 0.25 V
50 100 150
Electrical AC Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test Conditions
Symbol Min. Typ. Max. Unit
Transition frequency
V_CE = 2 V, I_C = 30 mA, f = 1 GHz
f_T
20 25
GHz
Collector-base capacitance V_CB = 2 V, f = 1 MHz
C_cb
0.15 0.3 pF
Collector-emitter capacitance V_CE = 2 V, f = 1 MHz
C_ce
0.4
pF
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
C_eb
0.6
pF
Noise figure
V_CE = 2 V, I_C = 5 mA,
F
Z_S = Z_Sopt, Z_L = Z_Lopt, f = 2 GHz
1.1
dB
Power gain,
V_CE = 2 V, I_C = 20 mA,
G_pe = G_ms *)
20
dB
maximum stable gain
Z_S = Z_Sopt, Z_L = Z_Lopt, f = 2 GHz
Transducer gain
V_CE = 2 V, I_C = 20 mA,
Z_S = Z_L= 50 Ω, f = 2 GHz
| S_21e | ²
14 17
dB
Third order intercept point V_CE = 2 V, I_C = 20 mA,
IP₃
22
dBm
at output
Z_S = Z_L= 50 Ω, f = 2 GHz
1 dB compression point
V_CE = 2 V, I_C = 20 mA,
Z_S = Z_L= 50 Ω, f = 2 GHz
P_–1dB
12
dBm
*) G_ms = | S_21e/S_12e |
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2 (4)
Document Number 85084
Rev. 3, 02–May–02