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TSDF1220_08 Datasheet, PDF (2/7 Pages) Vishay Siliconix – 12 GHz Silicon NPN Planar RF Transistor
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TSDF1220 / 1220R / 1220W / 1220RW
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Tamb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
VCBO
9
V
VCEO
6
V
VEBO
2
V
IC
40
mA
Ptot
200
mW
Tj
150
°C
Tstg
- 65 to + 150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Junction to ambient air
1)
RthJA
450
K/W
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-emitter cut-off current VCE = 12 V, VBE = 0
Collector-base cut-off current VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 1 V, IC = 0
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
Collector-emitter saturation
voltage
IC = 30 mA, IB = 3 mA
DC forward current transfer ratio VCE = 5 V, IC = 20 mA
Symbol
Min
Typ.
Max
Unit
ICES
100
μA
ICBO
100
nA
IEBO
2
μA
V(BR)CEO
6
V
VCEsat
0.1
0.5
V
hFE
50
100
150
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Transition frequency
VCE = 5 V, IC = 20 mA, f = 1 GHz
fT
12
GHz
Collector-base capacitance
VCB = 1 V, f = 1 MHz
Ccb
0.3
pF
Collector-emitter capacitance VCE = 1 V, f = 1 MHz
Cce
0.35
pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
0.5
pF
Noise figure
VCE = 5 V, IC = 3 mA, ZS = ZSopt,
F
ZL = 50 Ω, f = 2 GHz
1.2
dB
Power gain
VCE = 5 V, IC = 20 mA, ZS =
Gpe
14
dB
ZSopt, ZL = 50 Ω, f = 2 GHz
Transducer gain
VCE = 5 V, IC = 20 mA,
|S21e|2
12.5
dB
Z0 = 50 Ω, f = 2 GHz
Third order intercept point at VCE = 5 V, IC = 20 mA, f = 2 GHz
IP3
output
22
dBm
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2
Document Number 85066
Rev. 1.8, 08-Sep-08
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