TP0610KL Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

TP0610KL/BS250KL
Vishay Siliconix
New Product
SPECIFICATIONS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Time
Turn-Off Time
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, I_D = −10 µA
V_DS = V_GS, I_D = −250 µA
V_DS = 0 V, V_GS = "20 V
V_DS = 0 V, V_GS = "10 V
V_DS = 0 V, V_GS = "10 V, T_J = 85_C
V_DS = 0 V, V_GS = "5 V
V_DS = −60 V, V_GS = 0 V
V_DS = −60 V, V_GS = 0 V, T_J = 55_C
V_DS = −10 V, V_GS = −4.5 V
V_DS = −10 V, V_GS = −10 V
V_GS = −4.5 V, I_D = −25 mA
V_GS = −10 V, I_D = −500 mA
V_GS = −10 V, I_D = −500 mA, T_J = 125_C
V_DS = −10 V, I_D = −100 mA
I_S = −200 mA, V_GS = 0 V
V_DS = −30 V, V_GS = −15 V, I_D ^ −500 mA
V_DD = −25 V, R_L = 150 W
I_D ^ −150 mA, V_GEN = −10 V
R_g = 10 W
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
−60
V
−1
−2.1
−3.0
"10
mA
"200
"500
nA
"100
−1
mA
−10
−50
mA
−600
5.5
10
3.1
6
W
4.7
9
180
mS
−0.9
−1.4
V
1.7
3
0.26
nC
0.46
285
W
2.4
5
15.5
25
ns
21
35
12.5
20
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
Output Characteristics
1.0
1200
Transfer Characteristics
V_GS = 10 V
0.8
8V
7V
0.6
6V
T_J = −55_C
900
25_C
125_C
600
0.4
5V
300
0.2
4V
0.0
0
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
0
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
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Document Number: 72712
S-40244—Rev. A, 16-Feb-04