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| TLMO Datasheet, PDF (2/7 Pages) Vishay Siliconix – Low Current MiniLED | |||
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TLMO / S / Y2000
Vishay Semiconductors
Parameter
Storage temperature range
Soldering temperature
Thermal resistance junction/
ambient
Test condition
according to IPC 9501
mounted on PC board
(pad size > 5 mm2)
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Red
TLMS200.
Parameter
Test condition
Luminous intensity 1)
IF = 2 mA
Dominant wavelength
IF = 2 mA
Peak wavelength
IF = 2 mA
Angle of half intensity
IF = 2 mA
Forward voltage
Reverse voltage
IF = 2 mA
IR = 10 µA
Junction capacitance
VR = 0, f = 1 MHz
1) in one Packing Unit IVmax/IVmin ⤠2.0
Orange
TLMO200.
Parameter
Luminous intensity 1)
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Test condition
IF = 2 mA
IF = 2 mA
IF = 2 mA
IF = 2 mA
IF = 2 mA
IR = 10 µA
VR = 0, f = 1 MHz
1) in one Packing Unit IVmax/IVmin ⤠2.0
Yellow
TLMY200.
Parameter
Test condition
Luminous intensity 1)
IF = 2 mA
Dominant wavelength
IF = 2 mA
Peak wavelength
IF = 2 mA
Angle of half intensity
IF = 2 mA
Forward voltage
IF = 2 mA
Reverse voltage
IR = 10 µA
Junction capacitance
VR = 0, f = 1 MHz
1) in one Packing Unit IVmax/IVmin ⤠2.0
Symbol
Tstg
Tsd
RthJA
Value
- 40 to + 100
245
580
Unit
°C
°C
K/W
Symbol
Min
Typ.
Max
Unit
IV
2
4.5
mcd
λd
630
nm
λp
643
nm
Ï
± 60
deg
VF
1.8
2.2
V
VR
5
V
Cj
15
pF
Symbol
Min
Typ.
Max
Unit
IV
4
9
mcd
λd
598
605
611
nm
λp
610
nm
Ï
± 60
deg
VF
1.8
2.2
V
VR
5
V
Cj
15
pF
Symbol
Min
Typ.
Max
Unit
IV
3.2
7.1
mcd
λd
581
588
594
nm
λp
590
nm
Ï
± 60
deg
VF
1.8
2.2
V
VR
5
V
Cj
15
pF
www.vishay.com
2
Document Number 83185
Rev. 1.3, 21-Jan-05
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