TLHG4900 Datasheet, PDF (2/11 Pages) Vishay Siliconix – High Efficiency LED in ∅ 3 mm Clear Package

TLHG / O / P / R / Y4900
Vishay Semiconductors
Parameter
Storage temperature range
Soldering temperature
Thermal resistance junction/
ambient
Test condition
t ≤ 5 s, 2 mm from body
Symbol
T_stg
T_sd
R_thJA
Value
- 55 to + 100
260
400
VISHAY
Unit
°C
°C
K/W
Optical and Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Red
TLHR4900
Parameter
Test condition
Luminous intensity ¹⁾
I_F = 10 mA
Dominant wavelength
I_F = 10 mA
Peak wavelength
I_F = 10 mA
Angle of half intensity
I_F = 10 mA
Forward voltage
I_F = 20 mA
Reverse voltage
I_R = 10 µA
Junction capacitance
V_R = 0, f = 1 MHz
1) _{in one Packing Unit IVmin/IVmax ≤ 0.5}
Soft Orange
TLHO4900
Parameter
Test condition
Luminous intensity ¹⁾
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
I_F = 10 mA
I_F = 10 mA
I_F = 10 mA
I_F = 10 mA
I_F = 20 mA
I_R = 10 µA
V_R = 0, f = 1 MHz
1) _{in one Packing Unit IVmin/IVmax ≤ 0.5}
Yellow
TLHY4900
Parameter
Test condition
Luminous intensity ¹⁾
I_F = 10 mA
Dominant wavelength
I_F = 10 mA
Peak wavelength
I_F = 10 mA
Angle of half intensity
I_F = 10 mA
Forward voltage
I_F = 20 mA
Reverse voltage
I_R = 10 µA
Junction capacitance
V_R = 0, f = 1 MHz
1) _{in one Packing Unit IVmin/IVmax ≤ 0.5}
Symbol
Min
Typ.
Max
Unit
I_V
6.3
13
mcd
λ_d
612
625
nm
λ_p
635
nm
ϕ
± 16
deg
V_F
2
3
V
V_R
6
15
V
C_j
50
pF
Symbol
Min
Typ.
Max
Unit
I_V
10
26
mcd
λ_d
598
611
nm
λ_p
605
nm
ϕ
± 16
deg
V_F
2.4
3
V
V_R
6
15
V
C_j
50
pF
Symbol
Min
Typ.
Max
Unit
I_V
10
26
mcd
λ_d
581
594
nm
λ_p
585
nm
ϕ
± 16
deg
V_F
2.4
3
V
V_R
6
15
V
C_j
50
pF
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2
Document Number 83009
Rev. 1.5, 31-Aug-04