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TLCR5200 Datasheet, PDF (2/8 Pages) Vishay Siliconix – High Intensity LED, diameter 5 mm 30degree Untinted Non-Diffused
TLC.52..
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TLCR5200 , TLCY5200
Parameter
Test condition
Reverse voltage
DC forward current
Surge forward current
Power dissipation
Junction temperature
Tamb ≤ 85 °C
tp ≤ 10 µs
Tamb ≤ 85 °C
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 5 s, 2 mm from body
Thermal resistance junction/
ambient
TLCTG5200 , TLCB5200
Parameter
Test condition
Reverse voltage
DC forward current
Surge forward current
Power dissipation
Junction temperature
Tamb ≤ 60 °C
tp ≤ 10 µs
Tamb ≤ 60°C
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 5 s, 2 mm from body
Thermal resistance junction/
ambient
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Red
TLCR5200
Parameter
Test condition
Luminous intensity 1)
IF = 50 mA
Dominant wavelength
IF = 50 mA
Peak wavelength
IF = 50 mA
Spectral bandwidth at
50 % Irel max
IF = 50 mA
Angle of half intensity
IF = 50 mA
Forward voltage
IF = 50 mA
Reverse voltage
IR = 10 µA
Temperature coefficient of VF IF = 50 mA
Temperature coefficient of λd IF = 50 mA
1) in one Packing Unit IVMax./IVMin. ≤ 2.0
VISHAY
Symbol
VR
IF
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Symbol
VR
IF
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
Unit
5
V
50
mA
1
A
135
mW
125
°C
- 40 to + 100
°C
- 40 to + 100
°C
260
°C
300
K/W
Value
Unit
5
V
30
mA
0.1
A
135
mW
100
°C
- 40 to + 100
°C
- 40 to + 100
°C
260
°C
300
K/W
Part
Symbol Min
Typ.
Max
Unit
TLCR5200
IV
1350 4000
mcd
λd
611
616
622
nm
λp
622
nm
∆λ
18
nm
ϕ
VF
VR
5
TCVF
TCλd
± 15
2.1
- 3.5
0.05
deg
2.7
V
V
mV/K
nm/K
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2
Document Number 83210
Rev. 5, 08-Apr-03