TEMD1000_11 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Silicon PIN Photodiode, RoHS Compliant

TEMD1000, TEMD1020, TEMD1030, TEMD1040
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Vishay Semiconductors
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Reverse light current
Temperature coefficient of I_ra
Absolute spectral sensitivity
Angle of half sensitivity
I_F = 50 mA
V_F
I_R = 100 μA, E = 0
V_(BR)
60
V_R = 10 V, E = 0
I_ro
V_R = 5 V, f = 1 MHz, E = 0
C_D
E_e = 1 mW/cm²,  = 870 nm,
V_R = 5 V
I_ra
6.0
E_e = 1 mW/cm²,  = 950 nm,
V_R = 5 V
I_ra
V_R = 5 V,  = 870 nm,
TK_Ira
V_R = 5 V,  = 870 nm
s()
V_R = 5 V,  = 950 nm
s()

Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
_p
_0.5
V_R = 10 V, R_L = 50 ,  = 820 nm
t_r
V_R = 10 V, R_L = 50 ,  = 820 nm
t_f
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
TYP.
1
1
1.8
10
12
0.2
0.60
0.55
± 15
940
790 to 1050
4
4
MAX.
1.3
10
13.0
1000
100
UNIT
V
V
nA
pF
μA
μA
%/K
A/W
A/W
deg
nm
nm
ns
ns
100
10
10
V_R = 10 V
1
20
40
60
80
100
94 8427
T - Ambient Temperature (°C)
amb
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.0
V_CE = 5 V
λ = 950 nm
0.1
0.01
0.1
1
10
16055
E_e - Irradiance (mW/cm²)
Fig. 3 - Reverse Light Current vs. Irradiance
1.4
1.2
V_R = 5 V
λ = 950 nm
1.0
8
6
E=0
f = 1 MHz
4
0.8
2
0.6
0
94 8416
20
40
60
80
100
T_amb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
0
0.1
1
10
100
94 8430
V_R- Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 2.4, 09-Aug-11
2
Document Number: 81564
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