TCST2103_09 Datasheet, PDF (2/12 Pages) Vishay Siliconix – Transmissive Optical Sensor with Phototransistor Output

TCST2103, TCST2202, TCST2300
Vishay Semiconductors ^{Transmissive Optical Sensor with}
Phototransistor Output
ABSOLUTE MAXIMUM RATINGS ⁽¹⁾
PARAMETER
TEST CONDITION
INPUT (EMITTER)
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
t_p ≤ 10 µs
T_amb ≤ 25 °C
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector peak current
Power dissipation
Junction temperature
t_p/T = 0.5, t_p ≤ 10 ms
T_amb ≤ 25 °C
Note
(1) _{Tamb = 25 °C, unless otherwise specified}
ABSOLUTE MAXIMUM RATINGS
400
SYMBOL
V_R
I_F
I_FSM
P_V
T_j
V_CEO
V_ECO
I_CM
P_V
T_j
VALUE
6
60
3
100
100
70
7
200
150
100
UNIT
V
mA
A
mW
°C
V
V
mA
mW
°C
300
Coupled device
200
Phototransistor
IR-diode
100
0
0
30
60
90 120 150
95 11088
T_amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS ⁽¹⁾
PARAMETER
TEST CONDITION
COUPLER
Current transfer ratio
V_CE = 5 V, I_F = 20 mA
Collector current
Collector emitter saturation
voltage
Resolution, path of the shutter
crossing the radiant sensitive
zone
V_CE = 5 V, I_F = 20 mA
I_F = 20 mA, I_C = 1 mA
I_F = 20 mA, I_C = 0.5 mA
I_F = 20 mA, I_C = 0.1 mA
I_Crel = 10 % to 90 %
PART
SYMBOL MIN.
TCST2103
TCST2202
TCST2300
TCST2103
TCST2202
TCST2300
TCST2103
TCST2202
TCST2300
TCST2103
TCST2202
TCST2300
CTR
CTR
CTR
I_C
I_C
I_C
V_CEsat
V_CEsat
V_CEsat
s
s
s
10
5
1.25
2
1
0.25
TYP.
20
10
2.5
4
2
0.5
0.6
0.4
0.2
MAX.
0.4
0.4
0.4
UNIT
%
%
%
mA
mA
mA
V
V
V
mm
mm
mm
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2
For technical questions, contact: [e-mail]
Document Number: 81147
Rev. 1.0, 17-Aug-09