TCST1230_09 Datasheet, PDF (2/11 Pages) Vishay Siliconix – Transmissive Optical Sensor with Phototransistor Output

TCST1230
Vishay Semiconductors
Transmissive Optical Sensor with
Phototransistor Output
ABSOLUTE MAXIMUM RATINGS ⁽¹⁾
PARAMETER
TEST CONDITION
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature
T_amb ≤ 25 °C
Note
(1) _{Tamb = 25 °C, unless otherwise specified}
ABSOLUTE MAXIMUM RATINGS
400
SYMBOL
V_CEO
V_ECO
I_C
P_V
T_j
300
Coupled device
200
Phototransistor
IR-diode
100
0
0
30
60
90
120 150
95 11088
T_amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS ⁽¹⁾
PARAMETER
TEST CONDITION
COUPLER
Collector current
Collector emitter saturation
voltage
V_CE = 10 V, I_F = 20 mA
I_F = 20 mA, I_C = 0.2 mA
INPUT (EMITTER)
Forward voltage
Junction capacitance
OUTPUT (DETECTOR)
I_F = 60 mA
V_R = 0 V, f = 1 MHz
Collector emitter voltage
I_C = 1 mA
Emitter collector voltage
I_E = 10 µA
Collector dark current
V_CE = 25 V, I_F = 0 A, E = 0 lx
SWITCHING CHARACTERISTICS
Turn-on time
Turn-off time
I_C = 1 mA, V_CE = 5 V,
R_L = 100 Ω (see figure 2)
I_C = 1 mA, V_CE = 5 V,
R_L = 100 Ω (see figure 2)
Note
(1) _{Tamb = 25 °C, unless otherwise specified}
SYMBOL
I_C
V_CEsat
V_F
C_j
V_CEO
V_ECO
I_CEO
t_on
t_off
MIN.
0.5
70
7
VALUE
70
7
100
150
100
UNIT
V
V
mA
mW
°C
TYP.
1.25
50
10
15
10
MAX.
14
0.4
1.5
100
UNIT
mA
V
V
pF
V
V
nA
µs
µs
www.vishay.com
2
For technical questions, contact: [e-mail]
Document Number: 83765
Rev. 1.8, 17-Aug-09