TCST1030_10 Datasheet, PDF (2/11 Pages) Vishay Siliconix – Transmissive Optical Sensor with Phototransistor Output

TCST1030
Vishay Semiconductors
Transmissive Optical Sensor with
Phototransistor Output
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
OUTPUT (DETECTOR)
Collector emitter voltage
V_CEO
70
Emitter collector voltage
V_ECO
7
Collector current
Power dissipation
T_amb ≤ 25 °C
I_C
100
P_V
150
Junction temperature
T_j
100
ABSOLUTE MAXIMUM RATINGS
400
300
Coupled device
200
Phototransistor
IR-diode
100
0
0
30
60
90
120 150
95 11088
T_amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
COUPLER
Collector current
Collector emitter saturation
voltage
V_CE = 5 V, I_F = 10 mA
I_F = 10 mA, I_C = 1 mA
I_C
1.2
V_CEsat
INPUT (EMITTER)
Forward voltage
Junction capacitance
OUTPUT (DETECTOR)
I_F = 60 mA
V_F
V_R = 0 V, f = 1 MHz
C_j
Collector emitter voltage
I_C = 1 mA
V_CEO
70
Emitter collector voltage
I_E = 10 μA
V_ECO
7
Collector dark current
V_CE = 25 V, I_F = 0 A, E = 0 lx
I_CEO
SWITCHING CHARACTERISTICS
Turn-on time
Turn-off time
I_C = 1 mA, V_CE = 5 V,
R_L = 100 Ω (see figure 2)
t_on
I_C = 1 mA, V_CE = 5 V,
R_L = 100 Ω (see figure 2)
t_off
TYP.
2.4
1.25
50
10
15
10
UNIT
V
V
mA
mW
°C
MAX.
0.8
1.5
100
UNIT
mA
V
V
pF
V
V
nA
μs
μs
www.vishay.com
2
For technical questions, contact: [e-mail]
Document Number: 83763
Rev. 1.8, 20-Sep-10