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TCST1030_06 Datasheet, PDF (2/10 Pages) Vishay Siliconix – Transmissive Optical Sensor with Phototransistor Output
TCST1030(L)
Vishay Semiconductors
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Test condition
tp ≤ 10 µs
Tamb ≤ 25 °C
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature
Test condition
Tamb ≤ 25 °C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Coupler
Parameter
Collector current
Collector emitter saturation
voltage
Test condition
VCE = 5 V, IF = 10 mA
IF = 10 mA, IC = 1 mA
Input (Emitter)
Parameter
Forward voltage
Junction capacitance
Test condition
IF = 60 mA
VR = 0, f = 1 MHz
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector dark current
Test condition
IC = 1 mA
IE = 10 µA
VCE = 25 V, IF = 0, E = 0
Switching Characteristics
Parameter
Turn-on time
Turn-off time
Test condition
IC = 1 mA, VCE = 5 V,
RL = 100 Ω (see figure 1)
IC = 1 mA, VCE = 5 V,
RL = 100 Ω (see figure 1)
Symbol
Value
Unit
VR
6
V
IF
60
mA
IFSM
3
A
PV
100
mW
Tj
100
°C
Symbol
Value
Unit
VCEO
70
V
VECO
7
V
IC
100
mA
PV
150
mW
Tj
100
°C
Symbol
Min
Typ.
Max
Unit
IC
1.2
2.4
mA
VCEsat
0.8
V
Symbol
Min
Typ.
Max
Unit
VF
1.25
1.5
V
Cj
50
pF
Symbol
Min
Typ.
Max
Unit
VCEO
70
V
VECO
7
V
ICEO
10
100
nA
Symbol
Min
Typ.
Max
Unit
ton
15.0
µs
foff
10.0
µs
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Document Number 83763
Rev. 1.6, 16-Aug-06