TCST1030 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Transmissive Optical Sensor with Phototransistor Output

TCST1030(L)
Vishay Semiconductors
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Test Conditions
t_p ≤ 10 ms
T_amb ≤ 25°C
Symbol
Value
Unit
V_R
I_F
I_FSM
P_V
T_j
6
V
60
mA
3
A
100
mW
100
°C
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature
Test Conditions
T_amb ≤ 25°C
Symbol
Value
Unit
V_CEO
V_ECO
I_C
P_V
T_j
70
V
7
V
100
mA
150
mW
100
°C
Coupler
Parameter
Total power dissipation
Operation temperature range
Storage temperature range
Soldering temperature
Test Conditions
T_amb ≤ 25°C
1.6 mm from case, t ≤ 10 s
Symbol
Value
Unit
P_tot
T_amb
T_stg
T_sd
250
mW
–25 to +85
°C
–25 to +100 °C
260
°C
Electrical Characteristics (T_amb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Junction capacitance
Test Conditions
I_F = 60 mA
V_R = 0, f = 1 MHz
Symbol Min.
Typ.
Max.
Unit
V_F
1.25
1.5
V
C_j
50
pF
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector dark current
Test Conditions
I_C = 1 mA
I_E = 10 mA
V_CE = 25 V, I_F = 0, E = 0
Symbol
V_CEO
V_ECO
I_CEO
Min.
70
7
Typ. Max. Unit
V
V
10
100
nA
Coupler
Parameter
Collector current
Collector emitter
saturation voltage
Test Conditions
V_CE = 5 V, I_F = 10 mA
I_F = 10 mA, I_C = 1 mA
Symbol Min.
Typ.
Max.
Unit
I_C
1.2
2.4
mA
V_CEsat
0.8
V
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Document Number 83763
Rev. A4, 17–Jul–00