TCRT5000_09 Datasheet, PDF (2/12 Pages) Vishay Siliconix – Reflective Optical Sensor with Transistor Output

TCRT5000, TCRT5000L
Vishay Semiconductors
Reflective Optical Sensor with
Transistor Output
ABSOLUTE MAXIMUM RATINGS ⁽¹⁾
PARAMETER
TEST CONDITION
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature
T_amb ≤ 55 °C
SENSOR
Total power dissipation
Ambient temperature range
T_amb ≤ 25 °C
Storage temperature range
Soldering temperature
2 mm from case, t ≤ 10 s
Note
(1) _{Tamb = 25 °C, unless otherwise specified}
ABSOLUTE MAXIMUM RATINGS
300
Coupled device
200
SYMBOL
V_CEO
V_ECO
I_C
P_V
T_j
P_tot
T_amb
T_stg
T_sd
VALUE
70
5
100
100
100
200
- 25 to + 85
- 25 to + 100
260
UNIT
V
V
mA
mW
°C
mW
°C
°C
°C
Phototransistor
100
IR - diode
0
0
95 11071
25
50
75
100
T_amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS ⁽¹⁾
PARAMETER
TEST CONDITION
INPUT (EMITTER)
Forward voltage
Junction capacitance
Radiant intensity
Peak wavelength
Virtual source diameter
I_F = 60 mA
V_R = 0 V, f = 1 MHz
I_F = 60 mA, t_p = 20 ms
I_F = 100 mA
Method: 63 % encircled energy
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector dark current
I_C = 1 mA
I_e = 100 µA
V_CE = 20 V, I_F = 0 A, E = 0 lx
SENSOR
Collector current
V_CE = 5 V, I_F = 10 mA,
D = 12 mm
Collector emitter saturation
voltage
I_F = 10 mA, I_C = 0.1 mA,
D = 12 mm
Note
(1) _{Tamb = 25 °C, unless otherwise specified}
(2) _{See figure 3}
(3) _{Test surface: mirror (Mfr. Spindler a. Hoyer, Part No. 340005)}
SYMBOL
V_F
C_j
I_e
λ_P
d
V_CEO
V_ECO
I_CEO
I_C ^{(2) (3)}
V_CEsat ^{(2) (3)}
MIN.
940
70
7
0.5
TYP.
1.25
17
2.1
10
1
www.vishay.com
2
For technical questions, contact: [e-mail]
MAX.
1.5
21
200
2.1
0.4
UNIT
V
pF
mW/sr
nm
mm
V
V
nA
mA
V
Document Number: 83760
Rev. 1.7, 17-Aug-09