TCRT1000_09 Datasheet, PDF (2/10 Pages) Vishay Siliconix – Reflective Optical Sensor with Transistor Output

TCRT1000, TCRT1010
Vishay Semiconductors
Reflective Optical Sensor with
Transistor Output
ABSOLUTE MAXIMUM RATINGS ⁽¹⁾
PARAMETER
TEST CONDITION
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature
T_amb ≤ 25 °C
Note
(1) _{Tamb = 25 °C, unless otherwise specified}
ABSOLUTE MAXIMUM RATINGS
300
Coupled device
200
SYMBOL
V_CEO
V_ECO
I_C
P_V
T_j
Phototransistor
100
IR - diode
0
0
25
50
75
100
95 11071
T_amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS ⁽¹⁾
PARAMETER
TEST CONDITION
SYMBOL
MIN.
SENSOR
Collector current
V_CE = 5 V, I_F = 20 mA,
d = 1 mm (figure 2)
I_C ⁽²⁾
0.3
Cross talk current
V_CE = 5 V, I_F = 20 mA, (figure 1)
I_CX ⁽³⁾
Collector emitter saturation
voltage
I_F = 20 mA, I_C = 0.1 mA,
d = 1 mm (figure 2)
V_CEsat ⁽²⁾
INPUT (EMITTER)
Forward voltage
Radiant intensity
Peak wavelength
Virtual source diameter
I_F = 50 mA
V_F
I_F = 50 mA, t_p = 20 ms
I_e
I_F = 100 mA
λ_P
940
Method: 63 % encircled energy
d
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector dark current
I_C = 1 mA
V_CEO
32
I_E = 100 µA
V_ECO
5
V_CE = 20 V, I_F = 0 A, E = 0 lx
I_CEO
Notes
(1) _{Tamb = 25 °C, unless otherwise specified}
(2) _{Measured with the ‘Kodak neutral test card", white side with 90 % diffuse reflectance}
(3) _{Measured without reflecting medium}
VALUE
32
5
50
100
100
TYP.
0.5
1.25
1.2
UNIT
V
V
mA
mW
°C
MAX.
1
0.3
1.6
75
200
UNIT
mA
µA
V
V
mW/sr
nm
mm
V
V
nA
www.vishay.com
2
For technical questions, contact: [e-mail]
Document Number: 83752
Rev. 1.7, 17-Aug-09