TCRT1000_06 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Reflective Optical Sensor with Transistor Output

TCRT1000/TCRT1010
Vishay Semiconductors
Input (Emitter)
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V_R
5
V
Forward current
I_F
50
mA
Forward surge current
t_p ≤ 10 µs
I_FSM
3
A
Power dissipation
T_amb ≤ 25 °C
P_V
100
mW
Junction temperature
T_j
100
°C
Output (Detector)
Parameter
Test condition
Symbol
Value
Unit
Collector emitter voltage
V_CEO
32
V
Emitter collector voltage
V_ECO
5
V
Collector current
I_C
50
mA
Power dissipation
T_amb ≤ 25 °C
P_V
100
mW
Junction temperature
T_j
100
°C
300
Coupled device
200
Phototransistor
100
IR - diode
0
0
95 11071
25
50
75
100
T_amb - Ambient Temperature (°C)
Figure 1. Power Dissipation Limit vs. Ambient Temperature
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Coupler
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector current
V_CE = 5 V, I_F = 20 mA,
I_C1)
0.3
0.5
mA
d = 1 mm (figure 2)
Cross talk current
Collector emitter saturation
voltage
V_CE = 5 V, I_F = 20 mA (figure 1)
I_F = 20 mA, I_C = 0.1 mA,
d = 1 mm (figure 2)
I_CX2)
V_CEsat1)
1
µA
0.3
V
1) _{Measured with the ‘Kodak neutral test card", white side with 90% diffuse reflectance}
2) _{Measured without reflecting medium}
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2
Document Number 83752
Rev. 1.6, 04-Sep-06