TCNT2000 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Reflective Optical Sensor with Transistor Output

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ABSOLUTE MAXIMUM RATINGS
180
160
140
120
100
80
R_thJA = 285 K/W
60
40
20
0
0 10 20 30 40 50 60 70 80 90 100
T_amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation vs. Ambient Temperature
TCNT2000
Vishay Semiconductors
120
100
80
R_thJA = 285 K/W
60
40
20
0
0 10 20 30 40 50 60 70 80 90 100
T_amb - Ambient Temperature (°C)
Fig. 2 - Forward Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
INPUT (EMITTER)
Forward voltage
I_F = 20 mA
I_F = 100 mA
V_F
Temperature coefficient of V_F
Peak wavelength
Reverse current
I_F = 20 mA
I_F = 100 mA
V_R = 5 V
TKV_F
λ_P
I_R
OUTPUT (DETECTOR)
Collector emitter breakdown voltage
Emitter collector voltage
I_C = 0.1 mA, E = 0
I_E = 100 μA, E = 0
V_(BR)CEO
20
V_ECO
7
Collector emitter dark current
SENSOR
V_CE = 20 V, E = 0
I_CEO
Collector current
V_CE = 5 V, I_F = 20 mA, d = 1 mm
I_C
0.4
Current transfer ratio
Rise time
Fall time
I_C/I_F, d = 1 mm, V_CE = 5 V
I_C = 0.8 mA, V_CE = 5 V, R_L = 100 Ω
I_C = 0.8 mA, V_CE = 5 V, R_L = 100 Ω
CTR
t_r
t_f
TYP.
1.25
1.4
- 1.0
940
1
1.5
4
10
15
MAX.
1.45
1.7
10
30
3.0
70
70
UNIT
V
mV/K
nm
μA
V
V
nA
mA
%
μs
μs
Object:
Flat Mirror
d = working distance 1 mm
Fig. 3 - Test Circuit
15190
Rev. 1.2, 17-Aug-12
2
Document Number: 83796
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000