TCET1600_05 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, AC Input

TCET1600/TCET1600G
Vishay Semiconductors ^{Optocoupler, Phototransistor Output,}
AC Input
ORDER INFORMATION
PART
TCET1600
TCET1600G
Note
G = leadform 10.16 mm; G is not marked on the body.
REMARKS
CTR > 20 %, single channel, DIP-4
CTR > 20 %, single channel, DIP-4 400 mil spacing
ABSOLUTE MAXIMUM RATINGS ⁽¹⁾
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
t_p ≤ 10 µs
V_R
6
V
I_F
± 60
mA
I_FSM
± 1.5
A
P_diss
100
mW
T_j
125
°C
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
t_p/T = 0.5, t_p ≤ 10 ms
V_CEO
70
V
V_ECO
7
V
I_C
50
mA
I_CM
100
mA
P_diss
150
mW
T_j
125
°C
Isolation test voltage (RMS)
t = 1 min
V_ISO
5000
V_RMS
Total power dissipation
P_tot
250
mW
Operating ambient temperature range
T_amb
- 40 to + 100
°C
Storage temperature range
T_stg
- 55 to + 125
°C
Soldering temperature ⁽²⁾
2 mm from case, t ≤ 10 s
T_sld
260
°C
Notes
(1) _{Tamb = 25 °C, unless otherwise specified.}
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) _{Refer to wave profile for soldering conditions for through hole devices (DIP).}
ELECTRICAL CHARACTERISTCS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Junction capacitance
OUTPUT
I_F = ± 50 mA
V_F
V_R = 0 V, f = 1 MHz
C_j
1.25
1.6
V
50
pF
Collector emitter voltage
Emitter collector voltage
Collector dark current
COUPLER
I_C = 100 µA
V_CEO
70
I_E = 100 µA
V_ECO
7
V_CE = 20 V, I_F = 0, E = 0
I_CEO
V
V
100
nA
Collector emitter saturation voltage
I_F = 10 mA, I_C = 1 mA
V_CEsat
0.3
V
Cut-off frequency
V_CE = 5 V, I_F = 10 mA,
R_L = 100 Ω
f_c
100
kHz
Coupling capacitance
f = 1 MHz
C_k
0.3
pF
Note
T_amb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
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Document Number: 83538
Rev. 1.8, 01-Dec-05