TCET1600 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Optocoupler with Phototransistor Output

TCET1600 up to TCET4600
Vishay Telefunken
Features
Approvals:
D BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D FIMKO (SETI): EN 60950,
Certificate number 11027
D Underwriters Laboratory (UL) 1577 recognized,
file number E-76222 – Double Protection
D CSA (C–UL) 1577recognized,
file number E-76222 – Double Protection
D VDE 0884, Certificate number 115667
VDE 0884 related features:
D Rated impulse voltage (transient overvoltage)
V_IOTM = 8 kV peak
D Isolation test voltage
(partical discharge test voltage) V_pd = 1.6 kV peak
D Rated isolation voltage (RMS includes DC)
V_IOWM = 600 V_RMS (848 V peak)
D Rated recurring peak voltage (repetitive)
V_IORM = 600 V_RMS
Absolute Maximum Ratings
D Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI ≥ 175
D Thickness though insulation ≥ 0.75 mm
D Internal creepage distance > 4 mm
General features:
D Isolation materials according to UL94-VO
D Pollution degree 2
(DIN/VDE 0110 /resp. IEC 664)
D Climatic classification 55/100/21 (IEC 68 part 1)
D Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D Low temperature coefficient of CTR
D G = Leadform 10.16 mm;
provides creepage distance > 8 mm,
for TCET2600/ TCET4600 optional;
suffix letter ‘G’ is not marked on the optocoupler
D Coupling System U
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Output (Detector)
Test Conditions
t_p ≤ 10 ms
T_amb ≤ 25°C
Symbol
Value
Unit
V_R
I_F
I_FSM
P_V
T_j
6
V
±60
mA
±1.5
A
100
mW
125
°C
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Test Conditions
t_p/T = 0.5, t_p ≤ 10 ms
T_amb ≤ 25°C
Coupler
Parameter
Test Conditions
Isolation test voltage (RMS)
t = 1 min
Total power dissipation
T_amb ≤ 25°C
Operating ambient temperature range
Storage temperature range
Soldering temperature
2 mm from case t ≤ 10 s
Symbol
Value
Unit
V_CEO
V_ECO
I_C
I_CM
P_V
T_j
70
V
7
V
50
mA
100
mA
150
mW
125
°C
Symbol
Value
Unit
V_IO
P_tot
T_amb
T_stg
T_sd
5
kV
250
mW
–40 to +100 °C
–55 to +125 °C
260
°C
254
Rev. A4, 11–Jan–99