T1070P Datasheet, PDF (2/4 Pages) Vishay Siliconix – Silicon NPN Phototransistor

T1070P
Vishay Semiconductors
Silicon NPN Phototransistor
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
TYP.
Collector emitter breakdown voltage
I_C = 0.1 mA
V_(BR)CEO
6
Collector dark current
V_CE = 5 V, E = 0
I_CEO
Collector emitter capacitance
V_CE = 0 V, f = 1 MHz, E = 0
C_CEO
Collector light current
E_V = 20 lx, CIE illuminant A,
V_CE = 5 V
I_PCE
E_V = 100 lx, CIE illuminant A,
V_CE = 5 V
I_PCE
Temperature coefficient of I_PCE
CIE illuminant A
LED, white
TK_IPCE
TK_IPCE
Angle of half sensitivity

3
16
10
50
1.18
0.9
± 60
Wavelength of peak sensitivity
Range of spectral bandwidth
_p
570
_0.5
440 to 800
Collector emitter saturation voltage
E_V = 20 lx, CIE illuminant A,
I_PCE = 1.2 μA
V_CEsat
0.1
Notes
• The measurements are based on samples of die which are mounted on a TO-header without resin coating
MAX.
50
UNIT
V
nA
pF
μA
μA
%/K
%/K
deg
nm
nm
V
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
10 ^-6
10 ^-7
V_CE = 5 V
1000
10 ^-8
100
10 ^-9
10 ^-10
10
10 ^-11
10 ^-12
10 ^-13
- 40 - 20 0
20 40 60 80 100
19758
T_amb - Ambient Temperature (°C)
Fig. 1 - Collector Dark Current vs. Ambient Temperature
1
10
19760
100
E _v - Illuminance (Ix)
1000
Fig. 3 - Photo Current vs. Illuminance
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V_CE = 5 V, white LED
0
- 40 - 20 0 20 40 60 80 100
19759
T_amb - Ambient Temperature (°C)
Fig. 2 - Relative Photo Current vs. Ambient Temperature
25
f = 1 MHz
20
15
10
5
0
0.1
1.0
10.0
19762
V_CE - Collector Emitter Voltage (V)
Fig. 4 - Collector Emitter Capacitance vs. Collector Emitter Voltage
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Document Number: 81119
Rev. 1.4, 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000