Si9434BDY Datasheet, PDF (2/3 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

SPICE Device Model Si9434BDY
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current ^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance ^a
r_DS(on)
Forward Transconductance ^a
g_fs
Diode Forward Voltage ^a
V_SD
Dynamic ^b
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = −250 µA
V_DS = −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −6.3 A
V_GS = −2.5 V, I_D = −5.1 A
V_DS = −5 V, I_D = −6.3 A
I_S = −2.6 A, V_GS = 0 V
V_DS = −10 V, V_GS = −4.5 V, I_D = −6.3 A
V_DD = −10 V, R_L = 10 Ω
I_D ≅ −1 A, V_GEN = −4.5 V, R_G = 6 Ω
Simulated Measured
Data
Data
0.80
156
0.034
0.043
15
−0.80
0.033
0.044
10
−0.80
11.6
12
1.7
1.7
3.5
3.5
16
15
13
45
83
80
9
60
Unit
V
A
Ω
S
V
nC
ns
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2
Document Number: 73104
12-Aug-04