Si7344DP Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

Si7344DP
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 16 V, V_GS = 0 V
V_DS = 16 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 17 A
V_GS = 4.5 V, I_D = 14 A
V_DS = 6 V, I_D = 17 A
I_S = 3.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 10 V, V_GS = 4.5 V, I_D = 17 A
V_DD = 10 V, R_L = 10 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 3.7 A, di/dt = 100 A/ms
Min Typ Max Unit
0.8
2.1
V
"100
nA
1
mA
5
30
A
0.006
0.008
W
0.0095 0.012
33
S
0.75
1.1
V
10
15
3.3
nC
3.1
1.0
W
14
25
15
25
40
65
ns
15
25
35
70
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
V_GS = 10 thru 4 V
50
40
30
20
3V
10
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
www.vishay.com
2
Transfer Characteristics
60
50
40
30
20
T_C = 125_C
10
25_C
- 55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS - Gate-to-Source Voltage (V)
Document Number: 72128
S-03602—Rev. A, 31-Mar-03