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Si6901DQ Datasheet, PDF (2/3 Pages) Vishay Siliconix – Bi-Directional P-Channel 12-V (D-S) MOSFET | |||
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SPICE Device Model Si6901DQ
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS(th)
ID(on)
rDS(on)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = VGS, ID = â250 µA
VDS = â5 V, VGS = â4.5 V
VGS = â4.5 V, ID = â5.4 A
VGS = â2.5 V, ID = â4.8 A
VGS = â1.8 V, ID = â3.5 A
VDS = â10 V, ID = â5.4 A
VDS = â 6 V, VGS = â 4.5 V, ID = â 5.4 A
VDD = â 6 V, RL = 6 â¦
ID â
â 1 A, VGEN = â 4.5 V, RG = 6 â¦
Simulated Measured
Data
Data
0.66
133
0.027
0.034
0.045
21
0.026
0.034
0.046
30
64
80
10.5
10.5
34
34
91
110
230
310
354
210
46
270
Unit
V
A
â¦
S
nC
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ⤠300 µs, duty cycle ⤠2%.
www.vishay.com
2
Document Number: 72915
23-May-04
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